Temporary wafer bonding for thin wafer processing is one of the key technologies of 3D system integration. AIT is proud to add to its wafer processing materials solutions with an innovative family of temporary bonding film and spin coating solutions for temporary bonding of silicon device wafers to carrier wafers using traditional low temperature and low pressure thermo-compression process.
AIT is the first known to provide a film format of its high temperature temporary bonding adhesives for thin wafer processing. Leveraging its expertise of film adhesive manufacturing for semiconductor industry for the last 30+ years, wafer processing adhesive are available from 5 micron to 80 micron for device wafers up to 450mm with and without topography. AIT high temperature capable wafer processing adhesives can all be removed with heat-sliding and solvent assisted release separation process with the adhesive on device and carrier wafers removed without additional cleaning in most applications. The WPA-TL 330 can also be removed with laser assisted process.
AIT temporary bonding wafer processing adhesives are thermally stable to 3200-330°C and compatibility of the bonded compound wafers with standard WLP process equipment and for backside processing of 3DTSV wafers. High integrity in bond strength enables ease in back grinding to a thickness of 50 µm. Other device wafer processing such as dry etching, wet etching, CMP, PVD, solvent based spin coating of resists and polymers, lithography, electro plating and other elevated temperature processing up to 320-330°C for at least 60 minutes under high vacuum are built in the thermally and chemically stable novel polymers.
Besides the first to make available film formats of the high temperature wafer processing adhesives, AIT WPA-TS 320 and WPA-TL 330 in comparison to traditional and polyimide based temporary handling solutions, also offers one of the highest temperature and time of processing windows for thin wafer processing as well as ease of removal and cleaning.
Post time: Apr-01-2017